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2SB1234-TB-E
2SB1234-TB-E
Active
Transistors - Bipolar (BJT) - Single
Description:  PNP EPITAXIAL PLANAR SILICON
Manufacturer:  onsemi
Datasheet:   2SB1234-TB-E Datasheet
History Price: $0.10000
In Stock: 25000
Distributors
Specification
PDF Datasheet
Equivalent
2SB1234-TB-E vs 2SB1326TV2R
Mfr Part
2SB1234-TB-E
2SB1326TV2R
Category
Transistors - Bipolar (BJT) - Single
Transistors - Bipolar (BJT) - Single
Manufacturer
onsemi
Rohm Semiconductor
Series
-
-
Packaging
Bulk
Tape & Box (TB)
Status
Active
Obsolete
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
5 A
Voltage - Collector Emitter Breakdown (Max)
-
20 V
Vce Saturation (Max) @ Ib, Ic
-
1V @ 100mA, 4A
Current - Collector Cutoff (Max)
-
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
180 @ 500mA, 2V
Power - Max
-
1 W
Frequency - Transition
-
120MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
3-SIP
Supplier Device Package
-
ATV
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