2SB1234-TB-E vs 2SB1320A0A | Comparison in specification | icDirectory United Kingdom

2SB1234-TB-E

2SB1234-TB-E

Active

Transistors - Bipolar (BJT) - Single

Description: PNP EPITAXIAL PLANAR SILICON

Manufacturer: onsemi

Datasheet: 2SB1234-TB-E Datasheet

History Price: $0.10000

In Stock: 25000

2SB1234-TB-E vs 2SB1320A0A

Mfr Part

Category

Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single

Manufacturer

Series

-

-

Packaging

Bulk

Tape & Box (TB)

Status

Active

Obsolete

Transistor Type

-

PNP

Current - Collector (Ic) (Max)

-

100 mA

Voltage - Collector Emitter Breakdown (Max)

-

50 V

Vce Saturation (Max) @ Ib, Ic

-

1V @ 10mA, 100mA

Current - Collector Cutoff (Max)

-

1μA

DC Current Gain (hFE) (Min) @ Ic, Vce

-

160 @ 2mA, 10V

Power - Max

-

400 mW

Frequency - Transition

-

80MHz

Operating Temperature

-

150 ℃ (TJ)

Mounting Type

-

Through Hole

Package / Case

-

3-SIP

Supplier Device Package

-

MT-1-A1