2SB1234-TB-E
2SB1234-TB-E
Active
Description:  PNP EPITAXIAL PLANAR SILICON
Manufacturer:  onsemi
History Price: $0.10000
In Stock: 25000
2SB1234-TB-E vs 2SB1259
Manufacturer
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
Transistor Type
-
PNP - Darlington
Current - Collector (Ic) (Max)
-
10 A
Voltage - Collector Emitter Breakdown (Max)
-
120 V
Vce Saturation (Max) @ Ib, Ic
-
1.5V @ 10mA, 5A
Current - Collector Cutoff (Max)
-
10μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
2000 @ 5A, 4V
Power - Max
-
30 W
Frequency - Transition
-
100MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
TO-220-3 Full Pack
Supplier Device Package
-
TO-220F