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2SA673B-E
2SA673B-E
Active
Transistors - Bipolar (BJT) - Single
Description:  SMALL SIGNAL BIPOLAR TRANSISTOR,
Manufacturer:  Renesas Electronics
Datasheet:   2SA673B-E Datasheet
History Price: $0.37000
In Stock: 43600
Distributors
Specification
PDF Datasheet
Equivalent
2SA673B-E vs 2SA2154MFVGR,L3F
Mfr Part
2SA673B-E
2SA2154MFVGR,L3F
Category
Transistors - Bipolar (BJT) - Single
Transistors - Bipolar (BJT) - Single
Manufacturer
Renesas Electronics
Toshiba Semiconductor
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
150 mA
Voltage - Collector Emitter Breakdown (Max)
-
50 V
Vce Saturation (Max) @ Ib, Ic
-
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
-
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
200 @ 2mA, 6V
Power - Max
-
150 mW
Frequency - Transition
-
80MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
SOT-723
Supplier Device Package
-
VESM
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