Home
Manufacturers
Categories
Search
Login
☰
Home
/
Discrete Semiconductors
/
Transistors - Bipolar (BJT) - RF
/ Microchip Technology 2N3497
2N3497
Active
Transistors - Bipolar (BJT) - RF
Description:
SMALL-SIGNAL BJT
Manufacturer:
Microchip Technology
Datasheet:
2N3497 Datasheet
History Price: $32.40000
In Stock: 17000
Distributors
Specification
PDF Datasheet
Equivalent
Part Number
Manufacturer
Contact Person
Business Email
Inquiry Quantity
Country / Region
Submit Request
2N3497 vs 2N3499
Mfr Part
2N3497
2N3499
Category
Transistors - Bipolar (BJT) - RF
Transistors - Bipolar (BJT) - RF
Manufacturer
Microchip Technology
Solid State
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
Transistor Type
PNP
NPN
Voltage - Collector Emitter Breakdown (Max)
120V
100V
Frequency - Transition
150MHz
150MHz
Noise Figure (dB Typ @ f)
-
-
Gain
-
-
Power - Max
400mW
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 10V
100 @ 150mA, 10V
Current - Collector (Ic) (Max)
100mA
500mA
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-18 (TO-206AA)
TO-39
