2N1131L
2N1131L
Active
Description:  POWER BJT
Manufacturer:  Microchip Technology
Datasheet:   2N1131L Datasheet
History Price: $25.57500
In Stock: 27000
2N1131L vs 2N1724A
Mfr Part
Series
-
-
Packaging
Bulk
Tray
Status
Active
Active
Transistor Type
PNP
NPN
Current - Collector (Ic) (Max)
600 mA
5 A
Voltage - Collector Emitter Breakdown (Max)
40 V
120 V
Vce Saturation (Max) @ Ib, Ic
1.3V @ 15mA, 150mA
1.5V @ 500mA, 5A
Current - Collector Cutoff (Max)
10mA
100μA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 150mA, 10V
30 @ 2A, 15V
Power - Max
600 mW
3 W
Frequency - Transition
-
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Stud Mount
Package / Case
TO-205AA, TO-5-3 Metal Can
TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package
TO-5AA
TO-61