1N647-1E3
1N647-1E3
Active
Description:  DIODE GEN PURP 400V 400MA DO35
Manufacturer:  Microchip Technology
Datasheet:   1N647-1E3 Datasheet
History Price: $1.99499
In Stock: 43300
1N647-1E3 vs 1N6677-1/TR
Series
-
Military, MIL-PRF-19500/610
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Diode Type
Standard
Schottky
Voltage - DC Reverse (Vr) (Max)
400 V
40 V
Current - Average Rectified (Io)
400mA
200mA
Voltage - Forward (Vf) (Max) @ If
1 V @ 400 mA
500 mV @ 200 mA
Speed
Standard Recovery >500ns, >200mA (Io)
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
-
-
Current - Reverse Leakage @ Vr
200 nA @ 400 V
5 μA @ 40 V
Capacitance @ Vr, F
-
50pF @ 0V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
DO-204AH, DO-35, Axial
DO-204AH, DO-35, Axial
Supplier Device Package
DO-35 (DO-204AH)
DO-35 (DO-204AH)
Operating Temperature - Junction
-65 ℃ ~ 175 ℃
-65 ℃ ~ 125 ℃